TC1101V rev6_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1/2 low noise and medium power gaas fets features via holes for source grounding photo enlargement low noise figure: nf = 0.5 db typical at 12 ghz high associated gain: ga = 13 db typical at 12 ghz high dynamic range: 1 db compression power p -1 = 18.5 dbm at 12 ghz breakdown voltage: bv dgo 9 v lg = 0.25 m, wg = 160 m all-gold metallization for high reliability tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1101V is the same as tc1101 expect via holes in the source pads for reducing the grounding induc tance. it can be used in circuits up to 30 ghz and suitable f or low noise and medium power amplifier application including a wide range of commercial and military application . all devices are 100% dc tested to assure consiste nt quality. all bond pads are gold plated for either thermo-com pression or thermo-sonic wire bonding. electrical specifications (t a =25 c) symbol conditions min typ max unit nf noise figure at v ds = 2 v, i ds = 10 ma, f = 12ghz 0.5 0.7 db g a associated gain at v ds = 2 v, i ds = 10 ma, f = 12ghz 11 13 db p 1db output power at 1db gain compression point, f = 12ghz, v ds = 6 v, i ds = 25 ma 17.5 18.5 dbm g l linear power gain, f = 12ghz, v ds = 6 v, i ds = 25 ma 14 15 db i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 48 ma g m transconductance at v ds = 2 v, v gs = 0 v 55 ms v p pinch-off voltage at v ds = 2 v, i d = 0.32 ma -1.0* volts bv dgo drain-gate breakdown voltage at i dgo =0.08 ma 9 12 volts r th thermal resistance 180 c/w note: * for the tight control of the pinch-off voltage . TC1101V?s are divided into 3 groups: (1) TC1101Vp0710 : vp = -0.7v to -1.0v (2) TC1101Vp0811 : vp = -0.8v to -1.1v (3) TC1101Vp0912 : vp = -0.9v to -1.2v in addition, the customers may specify their requir ements. absolute maximum ratings (t a =25 c) typical noise parameters (t a =25 c) v ds = 2 v, i ds = 10 ma symbol parameter rating v ds drain-source voltage 7.0 v v gs gate-source voltage -3.0 v i ds drain current i dss i gs gate current 160 a p in rf input power, cw 18 dbm p t continuous dissipation 250 mw t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c opt frequency (ghz) nf opt (db) g a (db) mag ang rn/50 2 0.34 21.2 0.97 14 0.63 4 0.36 19.3 0.83 30 0.54 6 0.38 17.5 0.68 50 0.42 8 0.42 15.9 0.51 75 0.30 10 0.48 14.4 0.38 106 0.18 12 0.54 13.2 0.28 145 0.14 14 0.63 12.7 0.25 -168 0.12 16 0.76 12.5 0.31 -111 0.17 18 0.94 12.2 0.49 -45 0.36
TC1101V rev6_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2/2 chip dimensions units: micrometers chip thickness: 55 gate pad: 55 x 50 drain pad: 55 x 50 source pad: 55 x 60 chip handling die attachment : conductive epoxy or eutectic die attach is recommen ded. for eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform in st ate temperature : 290 c 5 c ; handling tool : tweezers ; time : less than 1min . wire bonding : the recommended wire bond method is thermocompressi on bonding with 0.7 or 1.0 mil (0.018 or 0.025mm) gold wire. state temperature : 2 20 c to 250 c ; bond tip temperature : 150 c ; bond force : 20 to 30 gms depending on size of wire and bond tip temperature. handling precautions : the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electr ostatic discharge(esd) precautions should be observ ed at all stages of storage, handling, assembly, and testing. the static discharge must less than 300v. g d s s 290 6 12 250 6 12
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